DEPARTMENT.FACULTY
- DEPARTMENT_STAFF.QUALIFICATION
PhD (IIT Roorkee)
- DEPARTMENT_STAFF.DESIGNATION
Professor
- DEPARTMENT_STAFF.THRUST_AREA
Microelectronics
- DEPARTMENT_STAFF.ADDRESS
- DEPARTMENT_STAFF.MOBILE
9897165051
- DEPARTMENT_STAFF.EMAIL
naushad.el@zhcet.ac.in, naushad.el@amu.ac.in
- DEPARTMENT_STAFF.TIME_TABLE
Naushad Alam received B. Tech. (ECE) degree from Jamia Millia Islamia, New Delhi, and M. Tech. (ECSD) degree from Aligarh Muslim University, Aligarh. He earned Ph.D. degree in Microelectronics from Indian Institute of Technology Roorkee, India. His doctoral work is on nanoscale circuit design considering the impact of process-induced mechanical stress. He has filed 2 Indian Patents and published 32 research papers in SCI indexed journals that include 10 IEEE Transactions. In addition, he has published 7 Book Chapters and 41 papers in reputed conferences such as IEEE ISQED, IEEE ISCAS, IEEE TENCON, IWPSD, VDAT, IEEE ISED, IEEE UPCON etc. He has received four Best Paper Awards at ICSCI-2008, IMPACT-2013, VDAT-2015 and IMPACT 2017, and delivered sixteen invited talks at BIT Mesra (2014), MNIT Jaipur (2015), SPIT Mumbai (2015), ZHCET Aligarh (2016), SPIT Mumbai (2020), IIITM Gwalior (2022), GEU Dehradun (2023) and MMTTC AMU Aligarh (2025). He has supervised three PhD theses and nineteen M Tech dissertations in the area of device-circuit co-design and is presently supervising one PhD student. He has also successfully executed a UGC-funded research project on TFET-based SRAM cell design for IoT Applications. His research interests include Analog IC Design, Device-Circuit Co-Design Issues, Robust Low Power Circuit Design, Robust Low Power SRAM Cell Design, Delay Models etc. Presently, he is a Professor in the Department of Electronics Engineering at Aligarh Muslim University, Aligarh.
- Journal Papers:
Shahneela Jamal Kidwai, Naushad Alam, Belal Iqbal, “A 12 Transistor Robust SRAM Cell Design for Aerospace Applications”, International Journal of Electronics (Taylor & Francis), 2025. ISSN: 0020-7217
Mohd. Yasir, Naushad Alam, “Design, Simulation and Comparative Analysis of a Novel NCFET based Astable Multivibrator and a Current Starved Astable Multivibrator”, Analog Integrated Circuits and Signal Processing (Springer), vol. 122, no. 38, pp. 1-14, 2025. ISSN: 1573-1979
Syed Afzal Ahmad, Naushad Alam, Shameem Ahmad, “Suppression of P-I-N Forward Leakage Current in Tunnel Field Effect Transistor”, Semiconductor Science and Technology (IOP), Vol. 38, No. 9, pp. 095007, 2023. ISSN: 1361-6641
Adeeba Sharif, Sayeed Ahmad, Naushad Alam, “A 9T SRAM Cell with Data-Independent Read Bitline Leakage and Improved Read Sensing Margin for Low Power Applications”, Semiconductor Science and Technology (IOP), Vol. 37, No. 5, pp. 055001, 2022. ISSN: 1361-6641
Mohd. Adil Raushan, Md. Yasir Bashir, Naushad Alam, Mohd. Jawaid Siddiqui “Performance Improvement of Dopingless Transistor for Low Power Applications”, Silicon (Springer), Vol 14, No. 8, pp. 8009–8020, 2022. ISSN: 1876-9918
Mohd. Yasir, Naushad Alam, “Design of TFET based Op-Amp and CCII for Low Voltage and Low Power Applications”, International Journal of Electronics (Taylor & Francis), Vol. 108, No. 10, pp. 1733-1753, 2021. ISSN: 0020-7217
Syed Afzal Ahmad, Naushad Alam, “Design of Triple Pocket Multi Gate Material TFET Structure for Low Power Applications”, Semiconductor Science and Technology (IOP), Vol. 36, No. 2, pp. 025015, 2021. ISSN: 1361-6641
Mohd. Adil Raushan, Naushad Alam, Mohd. Jawaid Siddiqui, “Design approach to improve the performance of JAMFETs”, IET Circuits, Devices and Systems, Vol. 14, No. 3, pp. 333-393, 2020. ISSN: 1751-8598
Syed Afzal Ahmad, Naushad Alam, “Suppression of Ambipolarity in Tunnel-FETs using Gate Oxide as Parameter: Analysis and Investigation”, IET Circuits, Devices and Systems, Vol. 14, No. 3, pp. 288-293, 2020. ISSN: 1751-8598
Mohd. Yasir, Naushad Alam, “Design of CNTFET based CCII using gm/ID Technique for Low Voltage and Low Power Applications”, Journal of Circuits, Systems and Computers, vol. 29, no. 9, 2020. ISSN: 0218-1266
Mohd. Yasir, Naushad Alam, “Systematic design of CNTFET based OTA and Op Amp using gm/ID Technique”, Analog Integrated Circuits and Signal Processing (Springer), vol. 102, no. 2, pp. 293–307, 2020. ISSN: 1573-1979
Sayeed Ahmad, Syed Afzal Ahmad, Mohd. Muqeem, Naushad Alam, Mohd. Hasan, “TFET Based Robust 7T SRAM Cell for Low Power Applications”, IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3834-3840, 2019. ISSN: 0018-9383
Mohd. Adil Raushan, Naushad Alam, Mohd. Jawaid Siddiqui, “Electrostatically Doped Drain Junctionless Transistor for Low Power Applications”, Journal of Computational Electronics (Springer), vol. 18, no. 3, pp. 864-871, 2019. ISSN: 1572-8137
Syed Afzal Ahmad, Naushad Alam, “Performance Improvement of Tunnel FET using Double Pocket”, Journal of Nanoelectronics and Optoelectronics (ASP), vol. 14, no. 8, pp. 1148–1157, 2019. ISSN: 1555-1318
Mohd. Adil Raushan, Naushad Alam, Mohd. Jawaid Siddiqui, “Dopingless Tunnel Field Effect Transistor with Oversized Back Gate: Proposal and Investigation”, IEEE Transactions on Electron Devices, vol. 65, no. 10, pp. 4701-4708, 2018. ISSN: 0018-9383
Sayeed Ahmad, Belal Iqbal, Naushad Alam, Mohd. Hasan, “Low Leakage Fully Half-Select-Free Robust SRAM Cells with BTI Reliability Analysis”, IEEE Transactions on Device and Materials Reliability, vol. 18, no. 3, pp. 337-349, 2018. ISSN: 1530-4388.
Syed Afzal Ahmad, Naushad Alam, Syed Intekhab Amin, “Impact of Pocket-Size Variation on the Performance of GaAs0.1Sb0.9/InAs based Heterojunction Double Gate TFET”, Journal of Nanoelectronics and Optoelectronics (ASP), vol. 13, no. 7, pp. 1009-1018, 2018. ISSN: 1555-1318
Arvind Sharma, Naushad Alam, Anand Bulusu, “Effective Drive Current for Near-threshold CMOS Circuits’ Performance Evaluation: Modeling to Circuit Design Techniques”, IEEE Transactions on Electron Devices, vol. 65, no. 6, pp. 2413-2421, 2018. ISSN: 0018-9383
Mohd. Adil Raushan, Naushad Alam, Mohd Jawaid Siddiqui, “Performance enhancement of Junctionless TFET using dual-k Spacers”, Journal of Nanoelectronics and Optoelectronics (ASP), vol. 13, no. 6, pp. 912-920, 2018. ISSN: 1555-1318
Mohd. Adil Raushan, Naushad Alam, Md Waseem Akram, Mohd Jawaid Siddiqui, “Impact of Asymmetric Dual-k Spacers on Tunnel Field Effect Transistors”, Journal of Computational Electronics (Springer), vol. 17, no. 2, pp. 756-765, 2018. ISSN: 1572-8137
Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “Robust TFET SRAM Cell for Ultra-Low Power IoT Applications”, International Journal of Electronics and Communications (Elsevier), vol. 89, pp. 70-76, 2018. ISSN: 1434-8411
Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “Pseudo Differential Multi-Cell Upset Immune Robust SRAM Cell for Ultra-Low Power Applications”, International Journal of Electronics and Communications (Elsevier), vol. 83, pp. 366-375, 2018. ISSN: 1434-8411
Arvind Sharma, Naushad Alam, Anand Bulusu, “Effective Current Model for Inverter-Transmission Gate Structure and Its Application in Circuit Design”, IEEE Transactions on Electron Devices, Vol. 64, No. 10, pp. 4002 – 4010, 2017. ISSN: 0018-9383
Sayeed Ahmad, M. K. Gupta, Naushad Alam, Mohd. Hasan, “ Low Leakage Single Bitline 9T (SB9T) Static Random-Access Memory”, Microelectronics Journal (Elsevier), Vol. 62, pp. 1-11, 2017. ISSN: 0026-2692
Sayeed Ahmad, M. K. Gupta, Naushad Alam, Mohd. Hasan, “Single-Ended Schmitt-Trigger Based Robust Low Power SRAM Cell”, IEEE Transactions on VLSI Systems, vol. 24, no. 8, pp. 2634-2642, 2016. ISSN:1063-8210
Baljit Kaur, Arvind Sharma, Naushad Alam, Sanjeev K. Manhas, Bulusu Anand, “A Variation Aware Timing Model for a 2-Input NAND Gate and Its Use in Sub-65nm CMOS Standard Cell Characterization”, Microelectronics Journal (Elsevier), vol. 53, pp. 45-55, 2016. ISSN: 0026-2692
Arvind Sharma, Naushad Alam, Sudeb Dasgupta, Bulusu Anand, “Multifinger MOSFETs’ Optimization Considering Stress and INWE in Static CMOS Circuits”, IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2517-2523, 2016. ISSN: 0018-9383
Baljit Kaur, Naushad Alam, Sanjeev K. Manhas, Bulusu Anand, “Efficient ECSM Characterization Considering Voltage, Temperature and Mechanical Stress Variability”, IEEE Transactions on Circuits and Systems-I, vol. 61, no. 12, pp. 3407 – 3415, 2014. ISSN: 1549-8328.
Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “An Analytical Delay Model for Mechanical Stress Induced Systematic Variability Analysis in Nanoscale Circuit Design”, IEEE Transactions on Circuits and Systems-I, vol. 61, no.6, pp. 1714-1726, 2014. ISSN:1549-8328
Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “The Impact of Process-Induced Mechanical Stress in Narrow Width Devices and Variable Taper CMOS Buffer Design”, Microelectronics Reliability (Elsevier), vol. 53, no. 5, pp. 718–724, 2013. ISSN: 0026-2714
Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “The Impact of Process-Induced Mechanical Stress on CMOS Buffer Design using Multi-Fingered Devices”, Microelectronics Reliability (Elsevier), vol. 53, no. 3, pp. 379–385, 2013. ISSN: 0026-2714
Naushad Alam, Bulusu Anand, and Sudeb Dasgupta, “Gate-Pitch Optimization for Circuit Design Using Strain-Engineered Multi-Finger Gate structures”, IEEE Transactions on Electron Devices, vol. 59, no. 11, pp. 3120-3123, 2012. ISSN: 0018-9383
Shazia Shakeel, Naushad Alam, “CNTFET based Radiation Hardened Latch”, Australian Journal of Electrical and Electronics Engineering (Taylor & Francis), vol. 18, no. 3, pp. 199-208, 2021. ISSN: 2205-362X. Scopus Indexed
Ahmed Shaban, Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “Compact and Low Power 11T-2MTJ Non-Volatile Ternary Content Addressable Memory Cell with High Sense Margin”, Journal of Low Power Electronics (ASP), vol. 15, no. 2, pp. 193-203, 2019. ISSN: 1546-1998. Scopus Indexed
Sayeed Ahmad, Naushad Alam, Mohd. Hasan, “A Robust 10T SRAM Cell with Enhanced Read Operation”, International Journal of Computer Applications, Vol. 129, No. 2, pp. 7-12, 2015. ISSN: 0975 – 8887